On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• strain for such films does not exist. However, it depicts how the stress drops because of strain relaxation in such films. Since resistance is directly proportional to strain in the tunneling + destruction model, one can think that the resistance of such films would also drop. Based on strain relaxations

• resistance vs strain curve at smaller strain and the plateau region are similar (Figure 2b), indicating a similar piezoresistance mechanism in both strain regions. This can be understood by strain relaxation occurring at GBs by crack formation and bond movement, as well as reformation and changes in the

• likely due to cracks already formed in the first cycle. Another process that might be considered for strain relaxation is grain rotation as shown in Figure 4. The rotation of grains during the straining of metal films has been studied extensively [40][41]. The effect is prominent for metal films with

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• photocatalysis over the past few years due to their distinct optical and electronic characteristics [42][88][106]. Simple strain relaxation and short diffusion paths are benefits of 1-D nanostructured materials and are advantageous for the separation of photogenerated carriers [102]. 1-D spindle-like BiVO4

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• relieve the epitaxial strain between the 2D Mn layer and the substrate occurs (significantly increasing the critical thickness for crystallographic defects nucleation). Second, there is the spontaneous elongation of 3D islands also induced by strain relaxation, which is the driving force leading to the

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• 1.32 to 2.97 MPa [28], provides a long-range strain relaxation when compared to a short-range strain relaxation in non-elastic polymers, such as PMMA and PC. Therefore, instead of directly projecting the initially flat surface to another depth position, the irradiation-induced strain warps the pristine

• strain specifically at the compacted regions. Therefore, it results in the reduction of the strain energy accumulated in the system. The energy minimization provides a thermodynamic force for the strain relaxation. In addition to this, the ion irradiation is needed to break atomic bonds and to lower the

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• incidence X-ray diffraction (GIXRD) and high-resolution transmission electron microscopy (HRTEM). Strain relaxation and its effect on the formation of NCs and the resulting interface integrity was studied and compared with structures having a thicker (ca. 200 nm) SiGe layer [23], deposited by radio

• SiGe core–shell NCs, as comprehensively studied by GiXRD and TEM analysis. The self-assembly is attributed to a dominant strain relaxation process, further assisted by already present small nanoparticles in the as-grown structures, acting as seed crystals for heterogeneous nucleation. The photocurrent

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan 10.3762/bjnano.7.9 Abstract The interplay of surface texture, strain relaxation, absorbance, grain size, and sheet resistance in textured, boron-doped ZnO (ZnO@B), transparent conductive oxide (TCO) materials of different thicknesses

• resistance. These experimental results reveal the optical and material characteristics of the TCO layer, which could be useful for enhancing the performance of solar cells through an optimized TCO layer. Keywords: absorbance; low-pressure chemical vapor deposition; strain relaxation; transparent conductive

• textured, ZnO@B TCO grown by LPCVD for thin-film solar cell applications is yet to be explored. This study reports the lattice strain relaxation, absorbance, and sheet resistance of textured ZnO TCO@B for solar cell applications. A thicker ZnO@B film enhances the strain relaxation, resulting in an

Possibilities and limitations of advanced transmission electron microscopy for carbon-based nanomaterials

• Xiaoxing Ke,
• Carla Bittencourt and
• Gustaaf Van Tendeloo

Beilstein J. Nanotechnol. 2015, 6, 1541–1557, doi:10.3762/bjnano.6.158

• reported that the deformation of Au-contacted CNT walls is more prominent compared to Pd-contacted CNT walls (not shwon), which could be associated to higher wettability of Pd over Au nanoparticles on one hand. On the other hand, a deformation mechanism through elastic strain relaxation is also proposed

Modeling viscoelasticity through spring–dashpot models in intermittent-contact atomic force microscopy

• Enrique A. López-Guerra and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2014, 5, 2149–2163, doi:10.3762/bjnano.5.224

• drop in stress under a constant strain) and for failing to describe creep (time-dependent strain relaxation under a constant stress). The latter precludes the existence of a mechanism for surface recovery upon deformation. As a consequence, the sample continuously yields to lower positions when

Probing viscoelastic surfaces with bimodal tapping-mode atomic force microscopy: Underlying physics and observables for a standard linear solid model

• Santiago D. Solares

Beilstein J. Nanotechnol. 2014, 5, 1649–1663, doi:10.3762/bjnano.5.176

• behavior of the probe–sample forces, although significant progress has already been achieved by using multi-frequency methods [9]. The contact models used so far are not true viscoelastic models, since they do not exhibit time-dependent stress and strain relaxation, but they have been shown to be

• solution of the cantilever equations of motion in the form of boundary conditions at the tip [4][5]. This model can reproduce time-dependent creep compliance (time-dependent strain relaxation under a constant stress) with high accuracy, but not stress relaxation (time dependent drop in stress under a

Structure, morphology, and magnetic properties of Fe nanoparticles deposited onto single-crystalline surfaces

• Armin Kleibert,
• Wolfgang Rosellen,
• Mathias Getzlaff and
• Joachim Bansmann

Beilstein J. Nanotechnol. 2011, 2, 47–56, doi:10.3762/bjnano.2.6

• particularly interesting for studying substrate-induced strain effects in deposited nanoparticles due to the large lattice misfit of 9.5% and the well-known strain relaxation in thin Fe films grown on W(110). The latter gives rise to a complex interplay between structure and magnetic properties [60][61]. The

• present in the first few layers from the interface [59], analogously to the findings in closed Fe films on W(110), where strain relaxation takes place within the first four layers [62]. However, a 6 nm particle (as shown in Figure 1e) consists of about several tens of atomic (001) or (110) layers